GLOW DISCHARGE DEPOSITION APPARATUS

摘要

Apparatus (37) for introducing sweep gas through a baffle system (52) adapted for use with glow discharge deposition apparatus in which successive amorphous semiconductor layers are deposited on a substrate (11). The deposition apparatus includes at least a pair of adjacent dedicated deposition chambers into each of which different process gases are introduced, the chambers being operatively connected by a gas gate. Inert gases introduced into a first one of the adjacent chambers are unidirectionally swept through the gas gate to minimize back diffusion of process gases from the other of the chambers. The baffle system (52) is adapted to prevent said sweep gases from entering into turbulent flow when traveling through the gas gate passageway. Further, a sufficient volume per unit time of sweep gas is introduced to insure that some sweep gas flows into the cathode region of the first chamber, thereby substantially preventing process gases and plasma from escaping from the cathode region and forming silane powder.