| 摘要 |
PURPOSE:To facilitate the integration of various kinds of optical microelements and to obtain various kinds of optical thin film ICs, by forming a PLZT type thin film and a thin film of a specified semiconductor on a specified substrate to provide a multilayered structure. CONSTITUTION:A PLZT [(Pb, La)(Zr, Ti)O3] type thin film 12 and a thin film 13 of a IV group semiconductor such as Si or Ge or a III-V group semiconductor such as GaAs or InP are formed on a sapphire (alpha-alumina) or spinel substrate 11 to manufacture a substrate for an optical device. Since light is propagated in the film 12, a significant electrooptic effect peculiar to the film 12 and an acoustooptic effect utilizing piezoelectric properties such as the diffraction of light due to a surface wave are attained at the same time. The propagation of light can be controlled by writing in a thin As2-S3 film or the like vapor-deposited on the surface of the film 12 by irradiation with electron beams, and propagated light can be detected with semiconductor photodetection elements integrated on the substrate. |
