| 摘要 |
PURPOSE:To obtain extremely excellent layer conduction by using gas plasma method containing F, when a layer conduction hole is provided through an electric insulation film which covers a W film. CONSTITUTION:A poly Si 24 and the W film 25, by covering the apertures of SiO2 films 22 and 23, are formed on an Si substrate 21 whereon a P or N type conductive layer has been finished in forming. An Si3N4 film 26 is superposed on the surface by plasma vapor growing method, and an aperture 27 is opened by plasma etching method using CF4. Next, an Al layer 28 is provided. This constitution enables to obtain excellent connection between the W layer and the Al layer and then generate no disconnections even in heat treatment. |
