| 摘要 |
PURPOSE:To obtain an MOSFET without being subject to influence of the coating characteristics of a gate insulating film by a method wherein a gate metal layer is buried in an insulating layer. CONSTITUTION:An SiO2 film 10 is provided on a glass plate 1, a window 12 is provided using a resist mask 11, and Mo2' in the thickness same as that of the film 10 is deposited. The mask 11 is removed, an SiO3 layer is formed on the plane surface, an island-formed amorphous Si layer is selectively formed on a gate metal 2, source and drain electrodes 6 and 7 a gate wiring 8 are provided, and the semiconductor device is completed. According to this constitution, as the island-like amorphous Si layer is formed on a plane surface, the gate insulating film 3 is formed in uniform thickness irrespective of coating characteristics, and the gate insulating film 3 is thinned at the edge of the gate metal 2, thereby enabling to prevent the decrease in withstand voltage between the gate and drain, to increase the withstand voltage and to increase the performance index of the semiconductor device. |
