| 摘要 |
PURPOSE:To contrive to reduce inductance without increasing parasitic capacitance of the semiconductor device by a method wherein a metal tape to make electric contact between a metal electrode part on the upper surface of the active layer of a semiconductor pellet and a case is widened in proportion to approach the case. CONSTITUTION:The metal tape 7 is fusion welded to the metal electrode part 3 and the upper surface of the insulator part 5 of the case to make electric contact to the pellet consisting of a substrate layer 1, the active layer and the metal electrode part 3 on the upper surface of the active layer, and to the case consisting of a metal part 4 and the insulator part 5. By narrowing width of the metal tape 7 at the part to be fusion welded to the metal electrode part 3, projection of the crushed part of the metal tape 7 to the outside of the metal electrode part 3 is not generated when fusion welding is performed, and increase of parasitic capacitance according to a gap between the projecting part and the substrate layer 1 is dissolved, while because width of the metal tape 7 at the part other than the circumference of the metal electrode part 3 is widened, large reduction of inductance can be attained. |
