Semiconductor memory device having tunnel diodes.

摘要

A semiconductor memory device has at least one memory cell (MC11 to MCMN) which includes first and second tunnel diodes (TD1 and TD2) connected in series in a forward-bias direction between first and second power source terminals (VD and VS). The first and second power source terminals (VD and VS) are held at constant potentials. A switching MOS transistor (TR1) is connected at one end to a connection point between the first and second tunnel diodes (TD1 and TD2). The potential at the connection point between the first and second tunnel diodes (TD1 and TD2) is determined by the potential at the other end of the switching MOS transistor (TR1).