| 摘要 |
PURPOSE:To enable to perform the sufficient heat radiation of a semiconductor element while securing the reliability of an electric junction between the semiconductor element and a substrate, by performing the electrical connection beween the semiconductor element and the wiring conductor of the substrate by a low melting point metal or alloy. CONSTITUTION:The back surface of an LSI1 and a heat sink 5 are joined by solder 11. Thereby, the heat generated in the LSI1 is conducted easily to the heat sink 5 and carried away. On the other hand, the LSI1 and the wiring conductor 10 of the alumina substrate 2 are electrically connected by a low melting point metal or alloy e.g. Ga-In alloy 12. The alloy 12 can make its melting point at a normal temperature, and therefore the alloy 12 is always in liquid when the LSI1 operates. The surface tension of the alloy 12 when in liquid is strong enough to form a sphere. Thereby, many electrodes of the SLI1 and the winging conductor 10 of the substrate 2 can be electrically connected respectively in the sphere of the alloy 12 one by one. Even when a cooling plate 5 and the substrate 2 vary in dimensions resulting in a mutual displacement, it is not easily deformed and destructed. |
