SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE:To flatten the surface of a substrate, and to prevent the degradation of element characteristics by completely arranging an insulating film to a field region. CONSTITUTION:A P<+> layer 11 and a silicon oxide film 12 are formed to the silicon substrate 10. A polycrystal silicon film 13 is deposited. The film 13 is grown up to a single crystal silicon film 14 through laser annealing. A resist film 15 is applied so that the surface is flattened. The films 14 are buried between the films 12 through uniform etching under conditions that the etching speed of the film 15 and silicon is equalized by means of reactive ion etching. Gate electrodes 17, source regions 18 and drain regions 19 are formed to the films 14.