| 摘要 |
PURPOSE:To prevent the increase of contact resistance among Mo and other metals by boring a hole to an insulating film on Mo wiring, thermally treating the whole and removing a surface barrier film on Mo. CONSTITUTION:The Mo wiring 102 is formed onto the SiO2 film 101 on a Si substrate 100 to which an element is shaped previously, the surface is coated with PSG 103, and the hole is bored. The PSG film is smoothed through treatment for ten min. at 1,000 deg.C in N2. The barrier film of the surface of Mo is removed through a reactive-sputtering etching method by using CCl4 and O2, the surface is coated with Al, and wiring 104 is formed. According to such constitution, not only contact resistance between Mo and Al is reduced but also contact resistance with any other metallic wiring connected to Mo is also decreased. |
