| 摘要 |
PURPOSE:To prevent short-circuiting between a main electrode and an auxiliary electrode in a gate turnoff type element and to gain high reliability by a method wherein the auxiliary electrode built at a recess of a p type base layer and close to an n type emitter layer is insulated by coating low-melting point glass over the recess. CONSTITUTION:For example, a p type base layer 2 and a p type diffused emitter layer 3 are diffused on both surfaces of a substrate which constitutes an n type base layer 1. After an n type emitter layer 4 is selectively diffused into the p type layer 2, the layer 2 exposed to the air and surrounded with the layer 4 is etched away to form a recess. Then, after an oxidation film 5 protecting the upper surface of a junction J1 has been formed, an Mo anode 9 is adhered to the p type emitter layer 3 via an Al layer 10, and also a cathode 6 made of Al-Si is poured into the recess. With this construction, short-circuit between the conductive layer 8 pressure welded to the cathode 6 and the auxiliary electrode 7 can be prevented. |
