| 摘要 |
PURPOSE:To prevent abnornal lateral diffusion of Zn when diffusing Zn to GaP or GaAsP by employing a mask formed by laminating a plurality of nitrided Si of different quality. CONSTITUTION:3%-SiH4 is branched by 1l with N2 as carrier, NH3 is flowed, is maintained at 1 Torr, an N type GaP substrate 6 is maintained at 320 deg.C to form the first layer 7a, the flow rate of SiH4 is lowered by approx. 10%, the second layer 7b is laminated, and Nitrided Si mask is formed. Then, the layers 7a, 7b are different in quality of films. The surface of the substrate is affected by stress due to the thermal expansion difference between the nitrided Si and the substrate by the abnormal diffusion of Zn to produce crystalline strain, and is produced due to large diffusing speed. Since the thermal expansions are cancelled by a plurality of laminated layers of different quality, it can prevent the lateral abnormal diffusion of Zn. |
