| 摘要 |
PURPOSE:To obtain an MIS transistor having less short channel effect and high performance by converting the depletion layer generating region of a semiconductor substrate directly under a gate oxidized film into an electrically insulating layer, thereby suppressing the extension of a drain side depletion layer. CONSTITUTION:Drain and source layers 2 and 3 of reversely conductive impurity conductive layer to the conductive type of a silicon substrate are formed in a silicon substrate 1, the intermediate part between the source layer 3 and the drain layer 2 of the oxidized film on the surface of the silicon substrate is partly removed, a gate oxidized film 4 is formed in the intermediate part, and the remaining thick oxidized film is retained on the other part as a field oxidized film 5. To form an electrically insulating layer 10 directly under the film 4, an element forming electrically insulating compound by reacting with the silicon is introduced by an ion implantation method through the film 4. |
