| 摘要 |
PURPOSE:To prevent the thermal denaturation of a substrate by a method wherein a protective film having SiO2 for its main ingredient is formed on a compound semiconductor substrate and a heat treatment is performed in an atmosphere containing as vapor those elements having a high vapor pressure or dissociative elements among the constituting elements of the substrate. CONSTITUTION:After an impurity region has been provided by performing an ion injection on a GaAs substrate, an SiO2 film is provided on the surface and the injected ion is activated by performing a heat treatment with AsH3 added in forming gas and have the partial pressure of As at 0.1-10 Torr. Thus, the prevention and suppression of thermal denaturation of the substrate due to the dissociation of the As are accomplished without deteriorating the characteristics of the SiO2 film such as an excellent activation coefficient of the injected ion, excellent producibility and productivity and the decrease in the resistance value (sheet registance) of the substrate surface. In addition, vapor P is added to Inp, vapor As is added to GaAlAs and vapor of AS and P is added to InGaAsP. |
