发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To form a preferable protecting film in a semiconductor device by coating liquid composition containing organic high molecular compound and glass forming organic compound on an aluminum wire on an Si substrate and then heating to cure it. CONSTITUTION:4-8% of dimethyl acetamide, 16-40% of methyl silicate and 16-12% of ethyl alcohol are mixed as diluents by volume ration with 40-80% of polyimide resin. At this time the volume ratio is adjusted in response to desired viscosity. This liquid composition is uniformly coated on an Si substrate formed with aluminum wire thereon by a rotary coating process. When it is treated at approx. 480 deg.C for approx. 30min and cured, the protecting film thus obtained has no crack and preferably adheres an SiO2 film in the gap between the wires, said film incorporating waterproofness, radiation resistance and particularly alpha ray resistance as excellent shielding effect.
申请公布号 JPS55154751(A) 申请公布日期 1980.12.02
申请号 JP19790062831 申请日期 1979.05.22
申请人 FUJITSU LTD 发明人 KURAHASHI TOSHIO;ONO TOSHIHIKO;FUJITA ICHIROU
分类号 H01L21/768;H01L21/31;H01L23/522 主分类号 H01L21/768
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