| 摘要 |
PURPOSE:To obtain a transistor having high breakdown voltage protective function without empolying a protective diode on external of the transistor. CONSTITUTION:A collector electrode C and an independent p<+>-layer 4 on the counter side thereto are formed on an n<->-collector layer 3 between p-base layers 1, 2, thereby inducing a short circuit to the electrode C ro reach-through phenomenon or avalanche phenomenon. Then, the breakdown voltage is selected therefor lower than an emitter-collector voltage. An n<+>-emitter layer 5 and the p-base layer 2 are connected through an insulating film 6 with a conductor 7. From applying a voltage between electrodes C and E with the electrode C positive, an inverted layer 8 is produced under the insulating film 6 in accordance as the voltage rises, the p-layers 1 and 2 are conducting through the p<+>-layer, and thus the collector and the emitter are conducting. By setting a voltage necessary for inversion lower than the sustained voltage of a transistor, the transistor can be protected from a secondary breakdown. |
