| 摘要 |
PURPOSE:To realize a miniature semiconductor oscillator by loading the FET into the waveguide. CONSTITUTION:FET5 is loaded into main waveguide 9. For the semiconductor oscillator, breaking waveguide 10 which turns to be the breaking region with the oscillator active frequency is connected to waveguide 10, and the termination is given at the place with a fixed length distant from connection point C via short circuit plate 1. At the same time, FET5 is installed near point C, and source terminal 8 is connected to the H surface wall of the waveguide. At the same time, drain terminal 6 is connected via bias terminal 11 which is inserted almost vertically to the H surface, and gate terminal 7 is extended by a fixed length with dielectric plate 12 provided into waveguide 10 used as the supporter to be connected to the bias circuit provided on plate 12 and then to apply the bias voltage. The electromagnetic field coupling amount between the drain and the source can be adjusted by shifting FET5 toward waveguide 10 from point C. |
