| 摘要 |
PURPOSE:To improve electrostatic chargeability, dark decay photosensitivity, and ghosts by specifying the layer structure of a photoconductive layer and the layer structure of a surface layer. CONSTITUTION:The photoconductive layer 103 on a base 101 is constituted of the non-single crystalline silicon carbide which contains 1-10atomic% hydrogen atom and 5-15% carbon atom and in which the ratio of the expansion and contraction mode of the C-H bond by IR absorption spectra and the expansion and contraction mode of the Si-H bond is 0.01-0.05; in addition, the layer is made into t layer structure without contg. the graphite structure or contg. the structure at <=1% per unit volume. The surface layer 104 is constituted of the non-single crystalline silicon carbide contains 50-70atomic% hydrogen atom and 20-40% carbon atom respectively and is made into the layer structure without contg. the graphite structure or contg. the structure at <=1% per unit volume. The electrostatic chargeability, dark decay, photosensitivity, and ghosts are improved in this way. |
