METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

摘要

A method of manufacturing semiconductor devices comprising (a) forming a base region on a semiconductor substrate surface (b) forming an emitter electrode window and a base electrode on an insulating film covering the semiconductor substrate surface (c) forming a polycrystal semiconductor layer over the entire area of said insulating film including said windows (d) forming an emitter region by introducing impurity into the substrate through said polycrystal semiconductor layer (e) forming an electrode metal layer over the entire part of said polycrystal semiconductor layer, and (f) leaving said electrode metal layer and polycrystal semiconductor layer in the form of wiring.