| 发明名称 |
SEMICONDUCTOR RADIATION DETECTOR |
| 摘要 |
PURPOSE:To detect the photoelectromotive force by radiations without external bias by providing a pn junction on the desired surface of a Si single crystal of more than 300OMEGAcm in specific resistance and more than 200mu seconds in carrier life.
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| 申请公布号 |
JPS53103387(A) |
申请公布日期 |
1978.09.08 |
| 申请号 |
JP19770017952 |
申请日期 |
1977.02.21 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
MATSUO NOBORU;KOBAYASHI TETSUJI;SUGITA TOORU |
| 分类号 |
G01T1/24;H01L31/00;H01L31/09 |
主分类号 |
G01T1/24 |
| 代理机构 |
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代理人 |
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| 地址 |
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