Non reversible semiconductor switching element - consists of resistance of polycrystalline silicon with high specific resistance

摘要

Switching element which is used as a semiconductor memory, can operate from low voltage and low current. It can be manufactured by the conventional LSI process. It is an inert memory operating on low voltage and current. The semiconductor switching element (10) consists of a resistance (11) of polycrystalline silicon with a high specific resistance. There are terminal electrodes (12,13) made from a metal or a semiconductor connected on both sides of the resistance. The switching operation is carried out by making use of the face that the resistance of the silicone resistance varies in one direction only dependent on the size of the operating voltage.