| 摘要 |
PURPOSE:To decrease the amount of heat value on a P-side electrode, and to improve the heat radiating characteristics by providing a P-type current squeezing layer between a substrate and the first clad layer. CONSTITUTION:At least a first clad layer 3, an active layer 4, and a second clad layer 5 are formed on an N-type substrate 1 in the title semiconductor laser, and a P-type current squeezing layer 2 is provided between the substrate 1 and the first clad layer 3. By having the above-mentioned constitution, the amount of heat value can be decreased, and at the same time, heat radiating property can be improved. Also, when the upper surface of the substrate 1, where a current squeezing layer 2 is provided, is flattend and the first clad layer 3 is provided on the above-mentioned flat surface, a highly reliable semiconductor laser having excellent crystallizability can be formed without inflicting adverse effect on the crystallizability of the clad layer, and the active layer grown thereon. |
