| 摘要 |
A semiconductor device includes: a plurality of source-side half channels which are placed in a first area and are arranged in first to 2N^th (N is an integer equal to or greater than 2) lines; a plurality of first drain-side half channels which are placed in a second area on one side of the first area and are arranged in first to N^th lines; a plurality of second drain-side half channels which are placed in a third area on the other side of the first area and are arranged in first to N^th lines; a plurality of first pipe channels which connect the source-side half channels in the first to N^th lines and the first drain-side half channels in the first to N lines; and a plurality of second pipe channels which connect the source-side half channels in (N+1)^th to 2N^th lines and the second drain-side half channels in the first to N^th lines. The present invention can reduce the number of slits and word lines in a three-dimensional non-volatile semiconductor device, and accordingly improve the stability against inclination and the integration degree. |
