| 摘要 |
PURPOSE:To prevent the penetration of moisture from outside and to eliminate corrosion or disconnection by coating and covering the surfaces except the bonding section of a leading electrode conductor in a planar semiconductor device with a protective film of conductive metal oxide or nitride. CONSTITUTION:An insulating film 10 such as SiO2 is formed on a semiconductor substrate 3 such as Si and a leading electrode conductor 11 such as Al is provided on the area from the exposed substrate surface to the insulating film through a window 8. A protective film 25 is provided on the whole surfaces of the parts 12, 14 except the part bonding the lead 17 of the electrode metal conductor 11. The protective film is composed of an oxide film or a nitride film provided on the surface of the electrode conductor by plasma oxygen gas or plasma nitride gas. In this way, a protective film having no moisture penetration can be formed at low temperatures to prevent the penetration of moisture and corrosion and disconnection by moisture can be eliminated. |
