| 摘要 |
PROBLEM TO BE SOLVED: To provide a new device in which the efficiency of a passivated device is not deteriorated with the lapse of time, by employing an isotope of hydrogen for passivating a layer. SOLUTION: A semiconductor device 10 has a substrate 12, and at least a part of the substrate 12 is made of Si. The semiconductor device 10 also includes a dielectric structure 18. This dielectric structure 18 is a field oxide containing an isotope of hydrogen at an appropriate concentration. This dielectric structure 18 is formed by thermal growth in the presence of steam of deuterium oxide or steam of another isotope of hydrogen. The steam of hydrogen isotopes must contain the hydrogen isotope at the highest possible concentration. The normal hydrogen concentration must not exceed 1 ppm in this steam. Thus, the hydrogen isotopes contribute to improvement in a process of deterioration of the semiconductor device 10. |
