DOUBLE SILICON SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A double silicon plate and a manufacturing method of a semiconductor element using it are provided to increase align margin for the following process by automatically forming a field oxidation film and making the extended oxidation layer to be exposed upward. CONSTITUTION: A first semiconductor layer(207) functions as a body. A second semiconductor layer(201) provides an active area. An insulation film(204) is formed between the first semiconductor layer(207) and the second semiconductor layer(201). A conductor(206) contacts the first semiconductor layer(207) and the second semiconductor layer(201) passing through the insulation film(204). The insulation film(204) is extended to the side wall of the second semiconductor layer(201) to separate the elements.