发明名称 |
Nonvolatile semiconductor memory that eases the dielectric strength requirements |
摘要 |
An object of the present invention is to ease the dielectric strength requirements for transistors forming power supply circuits or the like. A nonvolatile semiconductor memory of the present invention includes a plurality of memory cells, each of which is composed of a floating gate, a control gate, a drain, and a source, and a negative voltage generating means whose generated negative voltage is applied to the control gate for drawing a charge stored in the floating gate into a channel or the source when stored data is erased electrically. The nonvolatile memory of the present invention further includes positive erasure voltage generating means, and a positive voltage higher than a conventional supply voltage generated by the positive erasure voltage generating means is applied to the channel or the source.
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申请公布号 |
US5581107(A) |
申请公布日期 |
1996.12.03 |
申请号 |
US19940358604 |
申请日期 |
1994.12.14 |
申请人 |
FUJITSU LIMITED |
发明人 |
KAWAMURA, SHOUICHI;TAKASHINA, NOBUAKI;KASA, YASUSHI;ITANO, KIYOSHI |
分类号 |
H01L21/8247;G11C16/04;G11C16/14;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/80;H01L27/02;H01L29/78 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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