| 摘要 |
<p>PURPOSE:To obtain uniform epitaxial layer with good reproducibility by providing a solution holding block with a storage on a substrate holding block that has a substrate installation section and actuating a separation plate in the slit at the bottom section of the solution holding block. CONSTITUTION:A GaAs substrate 3 is installed 2 on a block 1, and a block 4 is arranged so as to position a solution storage 5 right above the installation section 2. A solution (In+InP+GaP) 6 is put into the storage 5, and it is separated from the substrate 3 by a plate 8. The plate 8 is moved by actuating from the outside to contact the growth solution 6 to the substrate 3 and the solution 6 is allowed to make epitaxial growth. Since, with this arrangement, the In growth solution 6 is positioned right above the GaAs substrate 3, the temperature difference of both is substantially zero, and breakage of supersaturation of the In growth solution can be prevented, and the growth of InGaP epitaxial crystals with excellent surface can be obtained with good reproducibility.</p> |
