LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

An LDMOS device, comprising a substrate (202), a gate electrode (211) on the substrate (202), a buried layer area in the substrate (202), and a diffusion layer on the buried layer area, wherein the buried layer area comprises a first buried layer (201) and a second buried layer (203), wherein the conduction types of impurities doped in the first buried layer (201) and the second buried layer (203) are opposite; the diffusion layer comprises a first diffusion area (205) and a second diffusion area (206), wherein the first diffusion area (205) is located on the first buried layer (201) and abuts against the first buried layer (201), and the second diffusion area (206) is located on the second buried layer (203) and abuts against the second buried layer (203); and the conduction types of impurities doped in the first buried layer (201) and the first diffusion area (205) are the same, and the conduction types of impurities doped in the second buried layer (203) and the second diffusion area (206) are the same. Additionally, also disclosed is a manufacturing method for the LDMOS device. A current path of the device in a conducting state is an area formed by the lower part of the second diffusion area (206) and the second buried layer (203) and is situated away from the surface of the device, so that the current capability of the device can be improved, the turn-on resistance can be reduced, and the reliability of the device can be improved.

主权项

1. A laterally diffused metal oxide semiconductor device, comprising:
a substrate; a gate located on the substrate; a buried layer region located in the substrate, the buried layer region comprising a first buried layer and a second buried layer, conductivity types of dopant impurities of the first buried layer and the second buried layer being opposite; and a diffusion layer located on the buried layer region, the diffusion layer comprising a first diffusion region and a second diffusion region, the first diffusion region being located on the first buried layer and being adjacent to the first buried layer; the second diffusion region being located on the second buried layer and being adjacent to the second buried layer; conductivity types of dopant impurities of the first buried layer and the first diffusion region being the same; conductivity types of dopant impurities of the second buried layer and the second diffusion region being the same; wherein the gate is located on the diffusion layer.