| 摘要 |
<p>A method of monitoring particle beam current in an ion implanter in which the ion beam is analyzed to separate it into a separate sub-beam for each ion charge state. At least one sub-beam, having a charge state different from the desired charge state, is intercepted, and the current of the intercepted sub-beam is measured. This current is useful as an estimate of the current of the desired sub-beam which is used for the implantation.</p> |
