Semiconductor structure has metal region and dielectric layer of low dielectric constant with a three layer barrier stack of silicon carbide nitride and silicon nitride

摘要

A semiconductor structure comprises a metal region (202,203) with a dielectric layer of low dielectric constant (204) and a barrier layer stack (251,257 comprising three dielectric layers of different thickness in contact with the metal and dielectric regions with the third dielectric layer being the thickest of the three layers. Preferably the first and third dielectric layers comprise silicon carbide nitride and the second layer silicon nitride. Independent claims are also included for the following: (A) A method of depositing dielectric layers;and (B) A method of forming a barrier layer stack.