Integrated vacuum microelectronic structure and manufacturing method thereof

摘要

An integrated vacuum microelectronic structure is described as having a highly doped semiconductor substrate, a first insulating layer placed above said doped semiconductor substrate, a first conductive layer placed above said first insulating layer, a second insulating layer placed above said first conductive layer, a vacuum trench formed within said first and second insulating layers and extending to the highly doped semiconductor substrate, a second conductive layer placed above said vacuum trench and acting as a cathode, a third metal layer placed under said highly doped semiconductor substrate and acting as an anode, said second conductive layer is placed adjacent to the upper edge of said vacuum trench, the first conductive layer is separated from said vacuum trench by portions of said second insulating layer and is in electrical contact with said second conductive layer.

主权项

1. An integrated vacuum microelectronic structure, comprising:
a highly doped semiconductor substrate; a first insulating layer positioned on a first side of the highly doped semiconductor substrate; a first conductive layer positioned on the first insulating layer; a second insulating layer positioned on the first conductive layer; a vacuum trench formed in the first and second insulating layers and extending to the highly doped semiconductor substrate; a second conductive layer positioned over the vacuum trench and configured to be a cathode; a third conductive layer positioned on a second side of the highly doped semiconductor substrate and configured to be an anode; and a fourth conductive layer having a first portion positioned over the second conductive layer and a second portion extending from the second conductive layer through the second insulating layer to the first conductive layer, said second conductive layer is positioned adjacent to an upper edge of the vacuum trench, the first conductive layer is separated from the vacuum trench by portions of the second insulating layer.