| 摘要 |
PURPOSE:To attain generation of a reference voltage with less fluctuation due to temperature change by constituting an MOS diode where a drain and a gate are connected in common by an MISFET so as to attain ease of design and mass- production of an electronic circuit. CONSTITUTION:T1, T2 are MISFETs to constitute the MOS diode where the drain and gate are connected in common. Further, the T1, T2 have different threshold voltages and nearly equal mutual conductances and a difference of the threshold voltage is extracted by taking the difference of drain voltages V1, V2. Moreover, the difference of the Fermi level of N and P channel semiconductors nearly equal to the difference of the threshold voltages is extracted by using an N gate MOS and a P gate MOS. Thus, the design and mass-production of the electronic circuit is attained easily and a reference voltage where the fluctuation of voltage and temperature change is small is generated. |
