发明名称 |
Semiconductor device and process for same |
摘要 |
A dual gate type CMOS device according to the present invention includes a silicon substrate having a trench in the main surface and a gate electrode including a polysilicon film and a tungsten silicide film formed above the main surface via a gate insulating film. The polysilicon film has a first part into which p type impurities are doped, a second part into which n type impurities are doped and a connection part which connects the first part and the second part within the trench, and part of the tungsten silicide film located above the connection part is removed.
|
申请公布号 |
US2002093051(A1) |
申请公布日期 |
2002.07.18 |
申请号 |
US20010845291 |
申请日期 |
2001.05.01 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NOHSOH HIROYASU;SOEDA SHINYA |
分类号 |
H01L29/43;H01L21/76;H01L21/8238;H01L27/092;H01L29/423;H01L29/49;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/43 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|