发明名称 |
MULTIPLE DOPING LEVEL BIPOLAR JUNCTIONS TRANSISTORS AND METHOD FOR FORMING |
摘要 |
A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
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申请公布号 |
US2009029510(A1) |
申请公布日期 |
2009.01.29 |
申请号 |
US20080243137 |
申请日期 |
2008.10.01 |
申请人 |
KERR DANIEL CHARLES;CARROLL MICHAEL SCOTT;HAMAD AMAL MA;LAI THIET THE;KEY ROGER W |
发明人 |
KERR DANIEL CHARLES;CARROLL MICHAEL SCOTT;HAMAD AMAL MA;LAI THIET THE;KEY ROGER W. |
分类号 |
H01L21/8249 |
主分类号 |
H01L21/8249 |
代理机构 |
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地址 |
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