| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that becomes normally-off and can suppress the occurrence of a leakage current. SOLUTION: The semiconductor device 10 forms an electron transit layer 16 on a substrate 17 by epitaxial growth, and further forms an electron supply layer 12 on the electron transit layer 16 by epitaxial growth. The electron transit layer 16 and the electron supply layer 12 are formed into a heterojunction structure, and a two-dimensional gas channel 13 can be formed on the junction interface. The electron supply layer 12 is covered with an insulating film 11. The electron supply layer 12 is formed by setting an Al composition ratio and a film thickness to 10-18[%] and 5-15 [nm], respectively. The insulating film 11 is allowed to grow at a low temperature of substantially 700°C. The manufactured semiconductor device 10 becomes the normally-off by preventing cracks, or the like from occurring. Also, since the insulating film 11 is formed under a low temperature of substantially 700°C, occurrence of a leakage current is restrained. COPYRIGHT: (C)2010,JPO&INPIT |
