| 发明名称 |
HETEROGENEOUS SOURCE DRAIN REGION AND EXTENSION REGION |
| 摘要 |
A semiconductor structure includes a source drain region of a first material and an extension region of a second material. A semiconductor device fabrication process includes forming a sacrificial dielectric portion upon a semiconductor substrate, forming a sacrificial gate stack upon the sacrificial dielectric portion, forming a gate spacer upon the sacrificial dielectric portion against the sacrificial gate, forming a source drain region of a first doped material upon the semiconductor substrate against the gate spacer, forming a replacement gate trench by removing the sacrificial gate stack, forming an extension trench by removing the sacrificial dielectric portion, and forming an extension region of a second doped material within the extension trench. |
| 申请公布号 |
US2016359046(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201615244499 |
申请日期 |
2016.08.23 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cheng Kangguo;Hashemi Pouya;Khakifirooz Ali;Reznicek Alexander |
| 分类号 |
H01L29/78;H01L29/08;H01L21/3105;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device fabrication process comprising:
forming a sacrificial dielectric portion upon a substrate; forming a sacrificial gate stack upon the sacrificial dielectric portion; forming a gate spacer upon the sacrificial dielectric portion against the sacrificial gate; forming a source drain region of a first doped material upon the substrate against the gate spacer; removing the sacrificial gate stack forming a replacement gate trench; forming an extension trench by removing the sacrificial dielectric portion, and; forming an extension region of a second doped material within the extension trench. |
| 地址 |
Armonk NY US |
