THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A thin film transistor includes: a first semiconductor layer; a second semiconductor layer arranged on the first semiconductor layer; and a pair of a source area and a drain area formed by a doping of impurities in both sides of the first semiconductor layer. The source area includes a first source layer on the same plane as the first semiconductor layer and a second source layer on the same plane as the second semiconductor layer. The drain area includes a first drain layer on the same plane as the first semiconductor layer and a second drain layer on the same plane as the second semiconductor layer. Any one between the first semiconductor layer and the second semiconductor layer becomes a channel layer. The present invention is able to reduce the sheet resistance and contact resistance of the thin film transistor while improving characteristics of the thin film transistor by reducing the size, distribution, and operational current of a threshold voltage of the thin film transistor.