| 摘要 |
PURPOSE:To obtain the single crystal silicon film of stripe form with good reproductivity by forming an Si film on an insulator layer and laminating an insulator layer comprising an Si film which is buried in grooves followed by laser annealing. CONSTITUTION:An Si film 2 is deposited on the substrate 1 on a surface of which an insulator layer is formed and an insulator layer 3 is deposited on said Si film 2. On a surface of the insulator layer 3, grooves are formed and an Si film 5 is buried only in the grooves 4. While a part of the Si film 5 is exposed, a PSG film 6 is deposited over other regions. Laser beams are scanned from the part where the Si film 5 is exposed in a direction designated by the arrow. Then the exposed Si film 5 forms a single crystal Si film. The PSG film 6 is removed by etching. Thus the single crystal Si film of stripe form can be obtained with good reproductivity. |
