THIN FILM TRANSITOR TYPE SRAM CELL

摘要

the first step of etching selectively an insulating layer after patterning a node contact; the second step of depositing n+ polysilicon layer sequentially; the third step of patterning a mask to form a node contact and etching the mask pattern to form a gate of a thin film transistor; the fourth step of etching the oxidation layer of the thin film transistor to form a node contact and etching n+ polysilicon layer of a thin film transistor; and the fifth step of forming source/drain regions by depositing the channel polysilicon layer of thin film PMOS transistor.