发明名称 NON-VOLATILE MEMORY AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To increase storage capacity in a non-volatile memory used for all sorts of electric equipment. SOLUTION: A memory substance is two-dimensionally aligned on a polymer film having a thickness of approximately severalμm. The memory material is connected to electrodes 13 and 14 via a resistance electrode 12, and is made of a phase change material 11. The polymer film where a memory cell is formed is reeled up in a roll shape, and is multilayered for cutting. The memory cell is laminated, for example, from a first cell formation layer 15 to a third cell formation layer 19, and is aligned three-dimensionally, thus obtaining a large- capacity non-volatile memory. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003229538(A) 申请公布日期 2003.08.15
申请号 JP20020027831 申请日期 2002.02.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TANAKA HIDEYUKI;MORITA KIYOYUKI;OTSUKA TAKASHI
分类号 G11C13/00;H01L27/10;H01L27/105;H01L27/28;H01L45/00;H01L51/05;(IPC1-7):H01L27/10 主分类号 G11C13/00
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