| 摘要 |
PURPOSE:To provide a dry etching method which can raise the productivity and yield rate by so arranging the constitution as to have no negative effect (for example, the damage on a gate oxide film) on a base, even in case that there is need to produce a sidewall protective film and remove it later. CONSTITUTION:In a dry etching method, which etches a polycide layer where a polysilicon layer 3 and a high melting point metal silicide layer 2 are formed in order on a base of an oxide film 4, with the resist pattern made selectively on that polycide layer as a mask, an under cut 6 is made in the high melting point metal silicide layer 2, etc., in contact with the resist pattern 1, and then the high melting point metal silicide layer 2 and the polysilicon layer 3 are anisotropically etched.
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