| 摘要 |
PROBLEM TO BE SOLVED: To suppress formation of a silicide on sidewalls which occurs, when ion implantation is performed for making silicon into amorphous form for suppressing thin wire effect. SOLUTION: After the formation of a gate electrode 14 and oxide film sidewalls 15, amorphous silicon layers 19a and 19b are respectively formed on the surfaces of the gate electrode 14 and a source drain region by implanting arsenic ions into the entire surface for making silicon into amorphous form at an energy of 40 keV and a dose of 3×1014 atoms/cm2. By conduction ion implantation, layers 20 having disturbed state oxide film structures are formed on the tops of the sidewalls 15 due to the ion implantation, but the layers 20 are removed through anisotropic etching, which is performed on the oxide film. When a titanium film 17 is deposited over the whole surface, and after the film 17 is heat-treated for silicification and unreacted titanium is removed thereafter, a state results in which titanium silicide layers 18 are formed only on the gate electrode 14 and diffusion regions.
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