发明名称 HIGH FREQUENCY MATCHING CIRCUIT BOARD AND MICROWAVE SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a high frequency matching circuit board capable of transmitting power efficiently from an impedance of 50 Ω to the impedance of a semiconductor element, and to provide a high frequency matching circuit board and a microwave semiconductor device capable of achieving further compaction, while preventing increase in the number of components.SOLUTION: A high frequency matching circuit board 2 includes ceramic layers 3a-3e laminated downward in order. An impedance matching circuit 4a is provided on the upper surface of the ceramic layer 3a, and connected with the upper surface thereof. An impedance matching circuit 4b is provided between the ceramic layers 3b, 3c. An impedance matching circuit 4c is provided between the ceramic layers 3d, 3e. Ground patterns 6a-6c are provided just under the impedance matching circuits 4a-4c. The dielectric constant ε1 of the ceramic layer 3a is larger than the dielectric constant ε3 of the ceramic layer 3a, and the dielectric constant ε3 of the ceramic layer 3c is larger than the dielectric constant ε5 of the ceramic layer 3e.SELECTED DRAWING: Figure 1
申请公布号 JP2016189418(A) 申请公布日期 2016.11.04
申请号 JP20150069358 申请日期 2015.03.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOYANAGI MOTOYOSHI;MINAMIDE YOSHINOBU
分类号 H05K3/46 主分类号 H05K3/46
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