发明名称 MICROWAVE PLASMA TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the evenness of a plasma treatment. SOLUTION: The optical width corresponding to the width of a microwave guide window in a region pinched by the outer periphery of an upper electrode 18 facing a sample bed 3 and the inner periphery of a ring member 10 and annularly exposed to a treating chamber 2 (the width obtained by multiplying the actual width and the square root of the relative dielectric constant of a medium) is set to the half-wavelength or above in vacuum of the microwaves generated by a microwave oscillator 20. The microwaves guided to an annular waveguide type antenna section 12a from the microwave oscillator 20 are introduced into the treating chamber 2 through a microwave guide window with high efficiency. The evenness of the density of the plasma generated in the treating chamber 2 is improved, and the evenness of the plasma treating applied to a sample substrate W is increased.
申请公布号 JP2000164392(A) 申请公布日期 2000.06.16
申请号 JP19980339756 申请日期 1998.11.30
申请人 SUMITOMO METAL IND LTD 发明人 MABUCHI HIROTSUGU
分类号 H01L21/302;H01L21/205;H01L21/3065;H05H1/46;(IPC1-7):H05H1/46;H01L21/306 主分类号 H01L21/302
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