| 摘要 |
A power module (1, 7) includes a substrate (2), a first sub-module (3) and a second sub-module (4). Each of the first sub-module (3) and the second sub-module (4) includes a semiconductor switch (30, 40) and a diode (31, 41). The first sub-module (3) is formed as the high-voltage-side switching element. The second sub-module (4) is formed as the low-voltage-side switching element. The plural electrodes (320, 321, 322, 323, 324, 325, 201) of the high-voltage-side switching element and the plural electrodes (420, 421, 422) of the low-voltage-side switching element are electrically connected with the conducting terminals (300, 400, 310, 410) of the corresponding semiconductor switches (30, 40) and the corresponding diodes (31, 41). The high-voltage-side switching element is disposed on the substrate (2) and electrically connected with the corresponding conducting parts (20, 21, 22) of the substrate (2). The low-voltage-side switching element is disposed on the high-voltage-side switching element and electrically connected with the corresponding conducting parts (20, 21, 22) of the substrate (2) through the high-voltage-side switching element. |
