REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, the phase-shift film 16 has a tantalum-based material layer comprising tantalum, and an anti-diffusion layer 15 comprising ruthenium and oxygen is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern.

主权项

1. A reflective mask blank comprising:
a substrate, and a multilayer reflective film, a protective film, and a phase-shift film for shifting a phase of EUV light, which are formed in said order on the substrate, wherein the protective film is made of a material containing ruthenium as a main component, wherein the phase-shift film has a tantalum-based material layer comprising tantalum, and wherein an anti-diffusion layer comprising ruthenium and oxygen is formed on a surface of the protective film, or as a part of the protective film on a side adjacent to the phase-shift film, so as to inhibit counter diffusion in relation to the phase-shift film.