发明名称 |
Dynamic strain sensor and method |
摘要 |
A dynamic strain sensor includes a strain sensitive transistor and a light emitting diode coupled to the strain sensitive transistor. The dynamic strain sensor can include a piezoelectric layer incorporated into the structure of the strain sensitive transistor. The dynamic strain sensor can sense dynamic strain and can measure and monitor the dynamic strain wirelessly. |
申请公布号 |
US9557229(B2) |
申请公布日期 |
2017.01.31 |
申请号 |
US201414564362 |
申请日期 |
2014.12.09 |
申请人 |
Honeywell Romania s.r.l. |
发明人 |
Dumitru Viorel Georgel;Costea Stefan Dan;Georgescu Ion;Brezeanu Mihai |
分类号 |
H01L29/84;G01L1/16;H01L27/20;H01L41/35;H01L41/29;H01L33/32;H01L41/187;H01L41/113;G01L1/26 |
主分类号 |
H01L29/84 |
代理机构 |
Schwegman, Lundberg & Woessner, P.A. |
代理人 |
Schwegman, Lundberg & Woessner, P.A. |
主权项 |
1. A dynamic strain sensor comprising:
a strain sensitive transistor, the strain sensitive transistor comprising:
a substrate;a gate metal electrode coupled to the substrate;a piezoelectric layer;a semiconductor layer, wherein the piezoelectric layer is positioned between the gate metal electrode and the semiconductor layer;a source metal electrode in direct contact with a first portion of the semiconductor layer and a first portion of the piezoelectric layer; anda drain metal electrode in direct contact with a second portion of the semiconductor layer and a second portion of the piezoelectric layer; an isolator layer located on a third portion of the semiconductor layer, a first portion of the source metal electrode and a first portion of the drain metal electrode; and a light emitting diode coupled to and in direct contact with the isolator layer and a portion of the drain metal electrode of the strain sensitive transistor. |
地址 |
Bucharest RO |