发明名称 Dynamic strain sensor and method
摘要 A dynamic strain sensor includes a strain sensitive transistor and a light emitting diode coupled to the strain sensitive transistor. The dynamic strain sensor can include a piezoelectric layer incorporated into the structure of the strain sensitive transistor. The dynamic strain sensor can sense dynamic strain and can measure and monitor the dynamic strain wirelessly.
申请公布号 US9557229(B2) 申请公布日期 2017.01.31
申请号 US201414564362 申请日期 2014.12.09
申请人 Honeywell Romania s.r.l. 发明人 Dumitru Viorel Georgel;Costea Stefan Dan;Georgescu Ion;Brezeanu Mihai
分类号 H01L29/84;G01L1/16;H01L27/20;H01L41/35;H01L41/29;H01L33/32;H01L41/187;H01L41/113;G01L1/26 主分类号 H01L29/84
代理机构 Schwegman, Lundberg & Woessner, P.A. 代理人 Schwegman, Lundberg & Woessner, P.A.
主权项 1. A dynamic strain sensor comprising: a strain sensitive transistor, the strain sensitive transistor comprising: a substrate;a gate metal electrode coupled to the substrate;a piezoelectric layer;a semiconductor layer, wherein the piezoelectric layer is positioned between the gate metal electrode and the semiconductor layer;a source metal electrode in direct contact with a first portion of the semiconductor layer and a first portion of the piezoelectric layer; anda drain metal electrode in direct contact with a second portion of the semiconductor layer and a second portion of the piezoelectric layer; an isolator layer located on a third portion of the semiconductor layer, a first portion of the source metal electrode and a first portion of the drain metal electrode; and a light emitting diode coupled to and in direct contact with the isolator layer and a portion of the drain metal electrode of the strain sensitive transistor.
地址 Bucharest RO