One Time Programmable Memory with a Twin Gate Structure

摘要

A one-time programmable memory (OTP) is provided that includes a combined word line programming line (WL-PL). The OTP includes a programmable transistor having a first threshold voltage and a first breakdown voltage, and a pass transistor having a second threshold voltage and a second breakdown voltage. The combined WL-PL is electrically connected to respective gate electrodes of both the programmable transistor and the pass transistor so that both receive the same control voltage. The second gate electrode has a work function that is greater than that of the first gate electrode, so that the second gate breakdown voltage is greater than the first gate breakdown voltage, which enables the use of the combined WL-PL.

主权项

1. A one-time programmable (OTP) memory, comprising:
a programmable transistor having a first threshold voltage and a first breakdown voltage, the programmable transistor comprising a first source region, a first drain region, and a first gate electrode; a pass transistor having a second threshold voltage and a second breakdown voltage, the pass transistor comprising a second source region, a second drain region, and a second gate electrode; and a combined word line programming line (WL-PL) electrically connected to the first gate electrode and the second gate electrode, wherein the first source region is electrically connected to the second drain region and the second source region is electrically connected to a bit line, and wherein a first work function of the first gate electrode is less than a second work function of the second gate electrode.