SEMICONDUCTOR DEVICES AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a semiconductor substrate. At least part of the first transistor body region is located between a first source/drain region of the first transistor structure and a second source/drain region of the first transistor structure. The semiconductor device includes a second transistor structure including a second transistor body region of a second conductivity type located within the semiconductor substrate. At least part of the second transistor body region is located between a first source/drain region of the second transistor structure and a second source/drain region of the second transistor structure. At least part of the second source/drain region of the second transistor structure is located between a doping region comprising the second source/drain region of the first transistor structure and the second transistor body region.

主权项

1. A semiconductor device comprising:
a first transistor structure comprising a first transistor body region of a first conductivity type located within a semiconductor substrate, wherein at least a part of the first transistor body region is located between a first source/drain region of the first transistor structure and a second source/drain region of the first transistor structure, wherein the first source/drain region of the first transistor structure is of the second conductivity type; a second transistor structure comprising a second transistor body region of a second conductivity type located within the semiconductor substrate, wherein at least a part of the second transistor body region is located between a first source/drain region of the second transistor structure and a second source/drain region of the second transistor structure, wherein at least a part of the second source/drain region of the second transistor structure is located between a doping region comprising the second source/drain region of the first transistor structure and the second transistor body region; a gate of the first transistor structure, wherein a transistor channel of the first transistor structure controllable by the gate of the first transistor structure is limited to a channel region located between the first source/drain region of the first transistor structure and the second source/drain region of the first transistor structure; a first electrode structure in electrical connection with the first source/drain region of the first transistor structure and the first source/drain region of the second transistor structure; and a second electrode region in electrical connection with the second source/drain region of the first transistor structure.