RESISTIVE MEMORY CELLS INCLUDING LOCALIZED FILAMENTARY CHANNELS, DEVICES INCLUDING THE SAME, AND METHODS OF MAKING THE SAME

摘要

Resistive memory cells are described. In some embodiments, the resistive memory cells include a switching layer having an inner region in which one or more filaments is formed. In some instances, the filaments is/are formed only within the inner region of the switching layer. Methods of making such resistive memory cells and devices including such cells are also described.